- reverse-bias breakdown voltage
- напряжение обратного пробоя
English-Russian electronics dictionary .
English-Russian electronics dictionary .
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
Zener diode — A Zener diode is a type of diode that permits current in the forward direction like a normal diode, but also in the reverse direction if the voltage is larger than the breakdown voltage known as Zener knee voltage or Zener voltage . The device… … Wikipedia
Gas-filled tube — See also: Gas discharge lamp A gas filled tube, also known as a discharge tube, is an arrangement of electrodes in a gas within an insulating, temperature resistant envelope. Although the envelope is typically glass, power tubes often use… … Wikipedia
Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) … Wikipedia
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Single-Photon Avalanche Diode — In optoelectronics the term Single Photon Avalanche Diode (SPAD)(also know as a Geiger mode APD or G APD) identifies a class of solid state photodetectors based on a reverse biased p n junction in which a photo generated carrier can trigger an… … Wikipedia
P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… … Wikipedia
Avalanche transistor — An Avalanche Transistor is a bipolar junction transistor designed for operation in the region of its collector current/collector to emitter voltage characteristics beyond the collector to emitter breakdown voltage, called avalanche breakdown… … Wikipedia
Tunnel diode — A tunnel diode or Esaki diode is a type of semiconductor diode which is capable of very fast operation, well into the microwave frequency region, by using quantum mechanical effects. It was invented in 1958 by Leo Esaki, who in 1973 received the… … Wikipedia
Avalanche photodiode — Avalanche photodiodes (APDs) are photodetectors that can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage (typically 100 200 V in silicon), APDs show an internal current gain effect (around 100) … Wikipedia